杨杰可靠性测试(汽车电子)

 

 

晨欣小编


  扬州扬杰电子科技股份有限公司

长期可靠性试验测试参考表
序号试验项目
    (Test Item)
试验条件
    (Condition)
参考标准
    (Reference)
实验时间
    (Time)
1预处理
    (
Pre-conditioning
   
Performed on surface mount devices (SMDs) prior   to TC,AC, H3TRB & IOL/PTC stresses only.   
   
JESD22-A113 1.Temperature   Cycling:-40~60℃,5cycles
   
2.Bake:125,24H
   
3.Moisture Soak:85±2℃,85±5%/168h
   
4.Reflow*3cycles:260,3cycles
    time 5-60min
2高温反偏
    (
High Temperature Reverse Bias
Tjmax,100%VRJESD22-A1081000Hrs
3间歇老化
    (
Intermittent Operational Life
Tj100,2min   ON/2min OFFMIL-STD-750
    Method 1037
 15000Cycles
4高温高湿反偏
   
(High-temperature High-humidity Reverse Bias)
85±2℃,85%±5%RH
   
80%VRMax=100V)
JESD22-A1011000Hrs
4 alt高加速寿命实验
   
(Highly Accelerated
    Stress Test)
130±2℃,85%±5%RH,OR
     110±2
℃,85%±5%RH
    80%VR
Max=42V)
JESD22-A11096Hrs   OR 264Hrs
5高温高湿
    (
High-temperature High-humidity storage test
85±2℃,85±5%RHMIL-STD-202F       METHOD-103B1000Hrs
5-1物理破坏性分析
    (D
PA
After H3TRB,Visual Inspection,X-RAY,De-cap for   Weld,De-cap for DieNAH3TRB实验后材料48H内完成
6温度循环试验
    (
Temperature Cycling
150℃(+15-0/15min,
    -55
℃(+0-10/15min
JESD22-A1041000   cycles
6-1物理破坏性分析
    (D
PA
After TC,Visual Inspection,X-RAY,De-cap for   Weld,De-cap for DieNATC实验后材料48H内完成
7高温储存
   
(High Temperature Storage)
150℃(+10-0JESD22-A1031000Hrs
8低温储存
    (
Low Temperature storage)
 -55Specification1000H
9高压蒸煮
    (
Auto-clave
121±2,15 psig,100%RHJESD22-A10296Hrs
10易焊性试验
    (
Solderability
235±5J-STD-0023
11耐焊接热
   
(Resistance to solder heat)
DIP270±5
   
SMD: 260(+5,-0)
JESD22-B106
    JESD22-A111
DIP7(+2, -0) 
    SMD :10'
12弯曲牢度
   
(Bending Strength)
φ0.6mm~0.78mm  W=0.5Kg90±5°MIL-STD-750
    Method 2036
3Times
φ1.20mm  W=2Kg
13终端牢度
   
(Terminal Strength)
φ0.6mm~φ0.78mm  W=1KgMIL-STD-750
    Method 2036
15'
φ1.20mm  W=3Kg
14正向浪涌试验
   
(Forward Surge Test
8.3ms,Single,Half-WaveMIL-STD-750
    Method 4066
5Times
15盐雾试验
    (
Salt Spray Test
试验温度:35±2℃,,氯化钠盐水浓度:5±0.1%
   
PH值范围:6.5-7.2,沉降率:1~2ml/80cm².h
GB/T   2423.17-200824H
16静电测试
   
(ESD)
HBM100pF,1500Ω  ,GPP:4KV;    Others:2KV;
    MM
200pF,0Ω  ,400V
AEC-Q101-001/0021cycle
17高温Gate偏压
    (
High Temperature Gate Bias
Tjmax,100%VgsJESD22-A1081000Hrs






 

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