-12V

45mΩ@-4.5V

-4.1A

60mΩ@-2.5V

90mΩ@-1.8V

Drain-Source Voltage

V_DS

-12

V

Gate-Source Voltage

VGS

±8

Continuous Drain Current

ID

-4.1

A

Continuous Source-Drain Diode Current

IS

-0.8

Maximum Power Dissipation

P_D

0.35

W

Thermal Resistance from Junction to Ambient(t≤10s)

R_θJA

357

℃/W

Operation Junction and Storage Temperature   Range

T_J,TSTG

-50 ~+150

℃  

Static  

Drain-source breakdown voltage

V(BR)DSS

V_GS = 0V, I_D   =-250µA

-12  

    V

Gate-source threshold voltage

VGS(th)

VDS   =V_GS, ID =-250µA

-0.5

-0.9

Gate-source leakage

IGSS

VDS   =0V, VGS =±8V

±100

nA

Zero gate voltage drain current

IDSS

VDS   =-8V, VGS =0V

-1

µA

    Drain-source on-state resistance^a  

RDS(on)  

V_GS =-4.5V, I_D =-3.5A 

30

4 5

mΩ

V_GS =-2.5V, I_D =-3A 

40

      60  

V_GS =-1.8V,I_D=-2.0A 

      6  0   

90

Forward transconductance^a

gfs

V_DS =-5V, I_D   =-4.1A

6

S

Dynamic

Input capacitance^b,c 

C_iss 

V_DS =-4V,V_GS   =0V,f =1MHz

740

pF  

Output capacitance^b,c 

C_oss 

290

Reverse transfer capacitance^b,c 

C_rss 

190

VDS   =-4V,VGS =-4.5V,

Total gate charge^b

Q_g  

I_D =-4.1A

7.8

15

nC  

VDS =-4V,VGS   =-2.5V,

I_D =-4.1A

4.5

9

Gate-source charge^b 

Q_gs  

1.2

Gate-drain charge^b

Q_gd  

1.6

Gate resistance^b,c 

R_g  

f =1MHz

1.4

7

14

Ω  

Turn-on delay time^b,c 

td(on)  

V_DD=-4V,

R_L=1.2Ω, ID   ≈-3.3A,

V_GEN=-4.5V,Rg=1Ω

13

20

ns  

Rise time^b,c

tr

35

53

Turn-off Delay time^b,c

td(off)

32

48

Fall time^b,c

tf

10

20

Turn-on delay time^b,c 

td(on)  

V_DD=-4V,

R_L=1.2Ω, ID   ≈-3.3A, V_GEN=-8V,Rg=1Ω

5

10

Rise time^b,c

tr

11

17

Turn-off delay time^b,c

td(off)

22

33

Fall time^b,c

tf

16

24

Drain-source   body diode characteristics

Continuous source-drain diode   current

I_S  

T_C=25℃

-1.4

A

Pulse diode forward current^a

ISM

-10

Body ciode voltage

VSD

I_F=-3.3A

-1.2

V