2022-11-12 15:32:09
mos管型号：CJ2306
mos管品牌：长电
模式管封装：SOT-23
商品链接：https://bomyg.com/goodsInfo/13017.html
规格书：https://bomyg.com/images/guigeshu/changdian/CJ2306-SOT-23-V2.pdf
商品描述
|
| 型号 |
CJ2306 | 品牌 | 长电 |
封装
|
SOT-23 | 极性Polarity | N |
| 漏极电流ID |
3.16A | 漏源导通电阻RDS(on) | 0.047Ω |
| 最大耗散功率PD |
0.75W | 漏源电压VDS | 1V |
| 特点 | mos管，适合诸多电路 |
mos管图片：
规格书信息摘取：
CJ2306 N-Channel MOSFET
V(BR)DSS | RDS(on)MAX | ID |
30V | 47mΩ@10V | 3.16A |
65mΩ@4.5V |
SOT-23
FEA TURE z TrenchFET Power MOSFET MARKING | APPLICATION z Load Switch for Portable Devices z DC/DC Converter Equivalent Circuit |
Maximum ratings (at TA=25℃ unless otherwise noted)
Parameter | Symbol | Value | Unit |
Drain-Source voltage | VDS | 30 | V |
Gate-Source Voltage | VGS | ±20 |
Continuous Drain Current (TJ=150℃)a,b | ID | 3.16 | A |
Pulsed Drain Current | IDM | 20 |
Continuous Source Current(Diode Conduction)a,b | IS | 0.62 |
Maximum Power Dissipationa,b | PD | 0.75 | W |
Thermal Resistance from Junction to Ambient (t≤5s) | RθJA | 100 | ℃/W |
Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to150 | ℃ |
Notes :
a. Surface Mounted on 1” ×1” FR4 board, t≤5s.
b. Pulse width limited by maximum junction temperature.
1
MOSFET ELECTRICAL CHARACTERISTICS
T =25a ℃ unless otherwise specified
Parameter | Symbol |
| Test Condition | Min | Typ | Max | Unit |
Static |
|
|
|
|
|
|
Drain-Source Breakdown Voltage | V(BR)DS | VGS = 0V, ID =250µA | 30 |
|
| V |
Gate-Threshold Voltage | VGS(th) | VDS =VGS, ID =250µA | 1.0 |
| 3.0 |
Gate-Body Leakage | IGSS | VDS =0V, VGS =±20V |
|
| ±100 | nA |
Zero Gate Voltage Drain Current | IDSS | VDS =30V, VGS =0V |
|
| 0.5 | µA |
Drain-Source On-Resistancea | RDS(on) | VGS =10V, ID =3.5A |
| 0.038 | 0.047 | Ω |
VGS =4.5V, ID =2.8A |
| 0.052 | 0.065 |
Forward Transconductancea | gfs | VDS =4.5V, ID =2.5A |
| 7.0 |
| S |
Diode Forward Voltage | VSD | IS=1.25A,VGS=0V |
| 0.8 | 1.2 | V |
Dynamic |
|
|
|
|
|
|
Gate Charge | Qg | VDS =15V,VGS =5V,ID =2.5A |
| 3.0 | 4.5 | nC |
Total Gate Charge | Qgt | VDS =15V,VGS =10V,ID =2.5A |
| 6 | 9 |
Gate-Source Charge | Qgs |
| 1.6 |
|
Gate-Drain Charge | Qgd |
| 0.6 |
|
Gate Resistance | Rg | f =1.0MHz | 2.5 | 5 | 7.5 | Ω |
Input Capacitance | Ciss | VDS =15V,VGS =0V,f =1MHz |
| 305 |
| pF |
Output Capacitance | Coss |
| 65 |
|
Reverse Transfer Capacitance | Crss |
| 29 |
|
Switching |
|
|
|
|
|
|
Turn-On Delay Time | td(on) | VDD=15V, RL=15Ω, ID ≈1A, VGEN=10V,Rg=6Ω |
| 7 | 11 | ns |
Rise Time | tr |
| 12 | 18 |
Turn-Off Delay Time | td(off) |
| 14 | 25 |
Fall Time | tf |
| 6 | 10 |
Notes :
a.Pulse Test : Pulse Width≤300µs, duty cycle ≤2%.
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