CJ2306

SOT-23

3.16A

0.75W

mos管，适合诸多电路

30V

47mΩ@10V

3.16A

65mΩ@4.5V

Drain-Source voltage

V_DS

30

V

Gate-Source Voltage

V_GS

±20

Continuous Drain Current (T_J=150℃)^a,b  

I_D

3.16

A

Pulsed Drain Current

IDM

20

Continuous Source Current(Diode Conduction)^a,b  

I_S

0.62

Maximum Power Dissipation^a,b

P_D

0.75

W

Thermal   Resistance from Junction to Ambient (t≤5s)

R_θJA

100

℃/W

Operating Junction and Storage Temperature   Range

TJ, Tstg

-55 to150

℃

Static

Drain-Source   Breakdown Voltage

V(BR)DS

V_GS   = 0V, I_D =250µA

30  

V  

Gate-Threshold   Voltage

VGS(th)

VDS   =V_GS, ID =250µA

1.0  

3.0

Gate-Body   Leakage

IGSS

VDS   =0V, VGS =±20V

±100

nA  

Zero   Gate Voltage Drain Current

IDSS

VDS   =30V, VGS =0V

0.5

µA  

Drain-Source   On-Resistance^a

RDS(on)  

V_GS   =10V, I_D =3.5A 

0.038

0.047

Ω  

V_GS   =4.5V, I_D =2.8A 

0.052

0.065

Forward   Transconductance^a

gfs

V_DS   =4.5V, I_D =2.5A

7.0 

S  

Diode   Forward Voltage

VSD

I_S=1.25A,V_GS=0V  

0.8  

1.2

V  

Dynamic

Gate   Charge

Q_g  

VDS   =15V,VGS =5V,ID =2.5A

3.0

4.5

nC  

Total   Gate Charge

Q_gt  

V_DS   =15V,V_GS =10V,I_D =2.5A

6

9

Gate-Source   Charge

Q_gs  

1.6

Gate-Drain   Charge

Q_gd  

0.6

Gate   Resistance

R_g

f =1.0MHz

2.5

5

7.5

Ω  

Input   Capacitance

C_iss 

V_DS   =15V,V_GS =0V,f =1MHz

305

pF  

Output   Capacitance

Coss

65

Reverse   Transfer Capacitance

C_rss 

29

Switching

Turn-On   Delay Time

td(on)  

V_DD=15V,

R_L=15Ω,   ID ≈1A,

V_GEN=10V,Rg=6Ω

7

11

ns  

Rise   Time

tr

12

18

Turn-Off   Delay Time

td(off)

14

25

Fall   Time

tf

6

10