长电CJ3402晶体管，SOT-23mos管
更新时间：2026-02-05 10:10:22
晨欣小编
2022-11-12 15:47:03
原厂型号：CJ3402
品牌：CJ江苏长电
封装/规格：SOT-23
商品编号：CJ3402-SOT-23
标准包装：3000
详情链接：https://bomyg.com/goodsInfo/60567.html
详细参数：
商品描述 | |||
| 型号 | CJ3402 | 品牌 | 长电 |
| 极性Polarity | N | V(BR)DSS(Max)(V) | 30V |
| 漏极电流ID | 4A | 漏源导通电阻RDS(on) | 0.055Ω |
| 最大耗散功率PD | 0.35W | 漏源电压VDS | 0.6V |
| 特点 | 本品广泛应用在各种电路中，并且支持小批量采购，用于研发测试 | ||
CJ3402图片展示：
规格书信息摘取
DESCRIPTIONCJ3402
N-Channel MOSFET
The CJ3402 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltage as low as 2.5V.
This device is suitable for use as a load switch or in PWM application.
FEATURES APPLICATION
z Lead free product is acquired z Load Switch and in PWM applications z Surface mount package
MARKING Equivalent Circuit
R2=Device code
Solid dot = Green molding compound device,if none, the normal device
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter | Symbol | Value | Unit |
Drain-Source Voltage | VDS | 30 | V |
Gate-Source Voltage | VGS | ±12 | V |
Continuous Drain Current | ID | 4 | A |
Pulsed Drain Current (note 1) | IDM | 15 | A |
Power Dissipation | PD | 0.35 | W |
Thermal Resistance from Junction to Ambient (note 2) | RθJA | 357 | ℃/W |
Operation Junction and Storage Temperature Range | TJ,TSTG | -55~+150 | ℃ |
1
MOSFET ELECTRICAL CHARACTERISTICS
T =25a ℃ unless otherwise specified
Parameter | Symbol | Test Condition | Min | Typ | Max | Unit | |
STATIC CHARACTERISTICS | |||||||
Drain-source breakdown voltage | V (BR)DSS | VGS = 0V, ID =250µA | 30 | V | |||
Zero gate voltage drain current | IDSS | VDS =24V,VGS = 0V | 1 | µA | |||
Gate-body leakage current | IGSS | VGS =±12V, VDS = 0V | 100 | nA | |||
Gate threshold voltage (note 3) | VGS(th) | VDS =VGS, ID =250µA | 0.6 | 0.85 | 1.4 | V | |
Drain-source on-resistance (note 3) | RDS(on) | VGS =10V, ID =4A | 33 | 55 | mΩ | ||
VGS =4.5V, ID =3A | 39 | 70 | mΩ | ||||
VGS =2.5V, ID =2A | 48 | 110 | mΩ | ||||
Forward transconductance (note 3) | gFS | VDS =15V, ID =4A | 8 | S | |||
Diode forward voltage (note 3) | VSD | IS=1A, VGS = 0V | 1 | V | |||
DYNAMIC CHARACTERISTICS (note 4) | |||||||
Input capacitance | Ciss | VDS =15V,VGS =0V,f =1MHz | 390 | pF | |||
Output capacitance | Coss | 54.5 | pF | ||||
Reverse transfer capacitance | Crss | 41 | pF | ||||
Gate resistance | Rg | VDS =0V,VGS =0V,f =1MHz | 3 | Ω | |||
SWITCHING CHARACTERISTICS (note 4) | |||||||
Turn-on delay time | td(on) | VGS=10V,VDS=15V, RL=3.75Ω,RGEN=6Ω | 3.3 | ns | |||
Turn-on rise time | tr | 1 | ns | ||||
Turn-off delay time | td(off) | 21.7 | ns | ||||
Turn-off fall time | tf | 2.1 | ns | ||||
Total gate charge | Qg | VDS =15V,VGS =4.5V,ID =4A | 4.34 | nC | |||
Gate-source Charge | Qgs | 0.6 | nC | ||||
Gate-drain Charge | Qgd | 1.38 | nC | ||||
Body diode reverse recovery time | t. | IF=4A,dI/dt=100A/µs | 1.2 | ns | |||
Body diode reverse recovery charge | Qrr | 6.3 | nC | ||||
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