LRC乐山LP2301LT1G晶体管，乐山代理商
晨欣小编
2022-11-12 15:56:29
原厂型号：LP2301LT1G
品牌：LRC(乐山无线电)
封装/规格：SOT-23(SOT-23-3)
商品编号：LP2301LT1G-SOT-23
标准包装：3000
元器件地址：https://bomyg.com/goodsInfo/79071.html
规格书：https://bomyg.com/images/guigeshu/LRC/LP2301LT1G.pdf
参数信息：
类型 | P 沟道 | |
电流 - 连续漏极（Id）（25°C 时） | 2.3A | |
漏源电压（Vdss） | 20V | |
漏源导通电阻（最大值） | 100 mΩ @ 2.8A，4.5V | |
栅源极阈值电压（最大值） | 900mV @ 250uA | |
功率耗散（最大值） | 900mW |
规格书内容摘取：
LP2301LT1G
20V P-Channel Enhancement-Mode MOSFET
1. 
FEATURES
● VDS =-20V
● RDS(ON),VGS@-2.5V,IDS@-2.0A=150mΩ
● RDS(ON),VGS@-4.5V,IDS@-2.8A=100mΩ
● We declare that the material of product compliance with RoHS requirements and Halogen Free.
● Advanced trench process technology
● 
High density cell design for ultra low on-resistance
● Fully characterized avalanche voltage and current improved shoot-through FOM
2. APPLICATIONS
● Simple drive requirement
● Small package outline
● Surface mount device
3. DEVICE MARKING AND ORDERING INFORMATION
Device | Marking | Shipping |
LP2301LT1G | 01 | 3000/Tape&Reel |
LP2301LT3G | 01 | 10000/Tape&Reel |
4. MAXIMUM RATINGS(Ta = 25ºC)
Parameter | Symbol | Limits | Unit |
Drain–Source Voltage | VDSS | -20 | V |
Gate–to–Source Voltage – Continuous | VGS | ±8 | V |
Drain Current – Continuous TA = 25°C – Pulsed(Note 1) | ID IDM | -2.3 -8 | A |
5. THERMAL CHARACTERISTICS
Parameter | Symbol | Limits | Unit |
Maximum Power Dissipation | PD | 0.9 | W |
Thermal Resistance, Junction–to–Ambient(Note 2) | RΘJA | 140 | ºC/W |
Junction and Storage temperature | TJ,Tstg | −55 | ºC |
+1501. Repetitive Rating: Pulse width limited by the Maximum junction temperation.
2. 1-in² 2oz Cu PCB board.
6. ELECTRICAL CHARACTERISTICS (Ta= 25ºC)
Characteristic | Symbol | Min. | Typ. | Max. | Unit | |
Static | ||||||
Drain–Source Breakdown Voltage (VGS = 0V, ID = -250 μA) | VBRDSS | -20 | - | - | V | |
Zero Gate Voltage Drain Current (VGS = 0V, VDS = -9.6 V) | IDSS | - | - | -1 | μA | |
Gate–Body Leakage Current, Forward (VGS = 8 V) | IGSSF | - | - | 100 | nA | |
Gate–Body Leakage Current, Reverse (VGS = - 8 V) | IGSSR | - | - | -100 | nA | |
Gate Threshold Voltage (VDS = VGS, ID = -250 μA) | VGS(th) | -0.4 | - | -0.9 | V | |
Static Drain–Source On–State Resistance (VGS = -4.5 V, ID = -2.8 A) (VGS = -2.5 V, ID = -2 A) | RDS(on) | - - | 69 83 | 100 150 | mΩ | |
Dynamic | ||||||
Total Gate Charge | (VDS = -10 V, VGS = -4.5 V,ID = -2 A) | Qg | - | 6 | - | nC |
Gate-Source Charge | Qgs | - | 0.8 | - | ||
Gate-Drain Charge | Qgd | - | 1.6 | - | ||
Input Capacitance (VGS = 0 V, f = 1.0MHz,VDS= -6 V) | Ciss | - | 514 | - | pF | |
Output Capacitance (VGS = 0 V, f = 1.0MHz,VDS= -6 V) | Coss | - | 68 | - | pF | |
Reverse Transfer Capacitance (VGS = 0 V, f = 1.0MHz,VDS= -6 V) | Crss | - | 59 | - | pF | |
Turn-On Delay Time | (VDD = -6 V, RL = 6 Ω ΙD = −1 Α, VGEN = -4.5 V RG = 6 Ω) | td(on) | - | 4 | - | ns |
Rise Time | tr | - | 5 | - | ||
Turn-Off Delay Time | td(off) | - | 91 | - | ||
Fall Time | tf | - | 43 | - | ||
Forward Voltage (VGS = 0 V, ISD = -0.75 A) | VSD | - | -0.8 | -1.2 | V | |
3.Pulse Test: Pulse Width ≤300 μs, Duty Cycle ≤2.0%.
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