乐山LN2302LT1G，SOT-23(SOT-23-3)效应管
2022-11-12 16:22:36
晨欣小编
2022-11-12 16:17:09
原厂型号：LN2302LT1G
品牌：LRC(乐山无线电)
封装/规格：SOT-23(SOT-23-3)
商品编号：LN2302LT1G-SOT-23
标准包装：3000
详细参数信息：
类型 | N 沟道 | |
电流 - 连续漏极（Id）（25°C 时） | 2.3A | |
漏源电压（Vdss） | 20V | |
漏源导通电阻（最大值） | 60 mΩ @ 2.8A，4.5V | |
栅源极阈值电压（最大值） | 1.2V @ 250uA | |
功率耗散（最大值） | 900mW |
商品链接地址：https://bomyg.com/goodsInfo/79096.html
规格书内容介绍：
LN2302LT1G
20V N-Channel Enhancement-Mode MOSFET
1. FEATURES
● VDS= 20V
● RDS(ON), VGS@4.5V, IDS@2.8A = 60mΩ
● RDS(ON), VGS@2.5V, IDS@2.0A = 115mΩ
● We declare that the material of product compliance with RoHS requirements and Halogen Free.
2. APPLICATIONS
● High density cell design for ultra low on-resistance improved shoot-through FOM
3. DEVICE MARKING AND ORDERING INFORMATION
Device | Marking | Shipping |
LN2302LT1G | N02 | 3000/Tape&Reel |
LN2302LT3G | N02 | 10000/Tape&Reel |
4. MAXIMUM RATINGS(Ta = 25ºC)
Parameter | Symbol | Limits | Unit |
Drain–Source Voltage | VDSS | 20 | V |
Gate–to–Source Voltage – Continuous | VGS | ±8 | V |
Drain Current – Continuous TA = 25°C – Pulsed(Note 1) | ID IDM | 2.3 8 | A |
5. THERMAL CHARACTERISTICS
Parameter | Symbol | Limits | Unit |
Maximum Power Dissipation | PD | 0.9 | W |
Thermal Resistance, Junction–to–Ambient(Note 2) | RΘJA | 145 | ºC/W |
Junction and Storage temperature | TJ,Tstg | −55 | ºC |
+1501. Repetitive Rating: Pulse width limited by the Maximum junction temperation.
2. 1-in² 2oz Cu PCB board.
6. ELECTRICAL CHARACTERISTICS (Ta= 25ºC)
Characteristic | Symbol | Min. | Typ. | Max. | Unit | |
Static | ||||||
Drain-Source Breakdown Voltage (VGS = 0 V, ID = 250 uA) | V(BR)DSS | 20 | - | - | V | |
Gate-Source Threshold Voltage (VDS = VGS , ID = 250 uA) | VGS(th) | 0.6 | 0.95 | 1.2 | V | |
Gate-Body Leakage (VDS = 0 V, VGS = ±8 V) | IGSS | - | - | ± 100 | nA | |
Zero Gate Voltage Drain Current (VDS = 9.6 V, VGS = 0 V) | IDSS | - | - | 1 | µA | |
Drain-Source On-Resistance(Note 3) (VGS = 4.5 V, ID = 2.8 A) (VGS = 2.5 V, ID = 2 A) | RDS(on) | - - | 40 50 | 60 115 | mΩ | |
Dynamic | ||||||
Total Gate Charge | (VDS = 10 V, VGS = 4.5 V,ID = 2.8 A) | Qg | - | 3.2 | - | nC |
Gate-Source Charge | Qgs | - | 0.35 | - | ||
Gate-Drain Charge | Qgd | - | 1.1 | - | ||
Input Capacitance | (VDS = 6 V, VGS = 0 V, f = 1 MHz) | Ciss | - | 327 | - | pF |
Output Capacitance | Coss | - | 47 | - | ||
Reverse Transfer Capacitance | Crss | - | 37 | - | ||
Turn-On Delay Time | (VDS = 6 V,ID = 1 A,VGS = 4.5 V, RG = 6.2 Ω, RL = 6.2 Ω) | td(on) | - | 3.1 | - | ns |
Rise Time | tr | - | 2.1 | - | ||
Turn-Off Delay Time | td(off) | - | 12 | - | ||
Fall Time | tf | - | 2.4 | - | ||
Diode Forward Voltage (ISD = 1.6 A, VGS = 0 V) | VSD | - | - | 1.2 | V | |
3.Pulse Test: Pulse Width ≤300 μs, Duty Cycle ≤2.0%.
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