乐山LN2302LT1G，SOT-23(SOT-23-3)效应管

晨欣小编

2022-11-12 16:17:09

　　原厂型号：LN2302LT1G

　　品牌：LRC(乐山无线电)

　　封装/规格：SOT-23(SOT-23-3)

　　商品编号：LN2302LT1G-SOT-23

　　标准包装：3000

详细参数信息：

规格书内容介绍：

LN2302LT1G

20V N-Channel Enhancement-Mode MOSFET

1. FEATURES

● VDS= 20V

● RDS(ON), VGS@4.5V, IDS@2.8A = 60mΩ

● RDS(ON), VGS@2.5V, IDS@2.0A = 115mΩ

● We declare that the material of product compliance with RoHS requirements and Halogen Free.

2. APPLICATIONS

● High density cell design for ultra low on-resistance improved shoot-through FOM

Parameter	Symbol	Limits	Unit
Drain–Source Voltage	VDSS	20	V
Gate–to–Source Voltage – Continuous	VGS	±8	V
Drain Current – Continuous TA = 25°C – Pulsed(Note 1)	ID IDM	2.3 8	A

Parameter	Symbol	Limits	Unit
Maximum Power Dissipation	PD	0.9	W
Thermal Resistance, Junction–to–Ambient(Note 2)	RΘJA	145	ºC/W
Junction and Storage temperature	TJ,Tstg	−55 +150	ºC

1. Repetitive Rating: Pulse width limited by the Maximum junction temperation.

2. 1-in² 2oz Cu PCB board.

Characteristic		Symbol	Min.	Typ.	Max.	Unit
Static
Drain-Source Breakdown Voltage (VGS = 0 V, ID = 250 uA)		V(BR)DSS	20	-	-	V
Gate-Source Threshold Voltage (VDS = VGS , ID = 250 uA)		VGS(th)	0.6	0.95	1.2	V
Gate-Body Leakage (VDS = 0 V, VGS = ±8 V)		IGSS	-	-	± 100	nA
Zero Gate Voltage Drain Current (VDS = 9.6 V, VGS = 0 V)		IDSS	-	-	1	µA
Drain-Source On-Resistance(Note 3) (VGS = 4.5 V, ID = 2.8 A) (VGS = 2.5 V, ID = 2 A)		RDS(on)	- -	40 50	60 115	mΩ
Dynamic
Total Gate Charge	(VDS = 10 V, VGS = 4.5 V,ID = 2.8 A)	Qg	-	3.2	-	nC
Gate-Source Charge		Qgs	-	0.35	-
Gate-Drain Charge		Qgd	-	1.1	-
Input Capacitance	(VDS = 6 V, VGS = 0 V, f = 1 MHz)	Ciss	-	327	-	pF
Output Capacitance		Coss	-	47	-
Reverse Transfer Capacitance		Crss	-	37	-
Turn-On Delay Time	(VDS = 6 V,ID = 1 A,VGS = 4.5 V, RG = 6.2 Ω, RL = 6.2 Ω)	td(on)	-	3.1	-	ns
Rise Time		tr	-	2.1	-
Turn-Off Delay Time		td(off)	-	12	-
Fall Time		tf	-	2.4	-
Diode Forward Voltage (ISD = 1.6 A, VGS = 0 V)		VSD	-	-	1.2	V

3.Pulse Test: Pulse Width ≤300 μs, Duty Cycle ≤2.0%.